1N5819BULK EIC SEMICONDUCTOR INC.
Виробник: EIC SEMICONDUCTOR INC.
Description: DIODE SCHOTTKY 40V 1A DO41
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bag
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Технічний опис 1N5819BULK EIC SEMICONDUCTOR INC.
Description: DIODE SCHOTTKY 40V 1A DO41, Current - Reverse Leakage @ Vr: 1 mA @ 40 V, Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A, Voltage - DC Reverse (Vr) (Max): 40 V, Part Status: Active, Operating Temperature - Junction: -65°C ~ 125°C, Supplier Device Package: DO-41, Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 110pF @ 4V, 1MHz, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: DO-204AL, DO-41, Axial, Packaging: Bag.