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1N5819M-13

1N5819M-13 Diodes Incorporated

1N5817M%2C5818M%2C5819M.pdf
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 1A MELF
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Obsolete
Supplier Device Package: MELF
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
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Технічний опис 1N5819M-13 Diodes Incorporated

Description: DIODE SCHOTTKY 40V 1A MELF, Current - Reverse Leakage @ Vr: 1 mA @ 40 V, Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A, Voltage - DC Reverse (Vr) (Max): 40 V, Part Status: Obsolete, Supplier Device Package: MELF, Current - Average Rectified (Io): 1A, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-213AB, MELF (Glass), Packaging: Cut Tape (CT).