1N5822HA0G Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 3A DO201AD
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Qualification: AEC-Q101
Grade: Automotive
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Технічний опис 1N5822HA0G Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 3A DO201AD, Current - Reverse Leakage @ Vr: 500 µA @ 40 V, Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A, Voltage - DC Reverse (Vr) (Max): 40 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 125°C, Supplier Device Package: DO-201AD, Current - Average Rectified (Io): 3A, Capacitance @ Vr, F: 200pF @ 4V, 1MHz, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: DO-201AD, Axial, Packaging: Tape & Box (TB), Qualification: AEC-Q101, Grade: Automotive.

