1N6073/TR Microchip Technology

Description: DIODE GEN PURP 50V 850MA, Current - Reverse Leakage @ Vr: 1 µA @ 50 V, Voltage - Forward (Vf) (Max) @ If: 2.04 V @ 9.4 A, Voltage - DC Reverse (Vr) (Max): 50 V, Operating Temperature - Junction: -65°C ~ 155°C, Supplier Device Package: A, Axial, Current - Average Rectified (Io): 850mA, Technology: Standard, Reverse Recovery Time (trr): 30 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: A, Axial, Packaging: Tape & Reel (TR).