Продукція > GENESIC SEMICONDUCTOR > 1N8034-GA
1N8034-GA

1N8034-GA GeneSiC Semiconductor

1N8034-GA.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 650V 9.4A TO257
Current - Reverse Leakage @ Vr: 5 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 250°C
Supplier Device Package: TO-257
Current - Average Rectified (Io): 9.4A
Capacitance @ Vr, F: 1107pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-257-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис 1N8034-GA GeneSiC Semiconductor

Description: DIODE SIL CARB 650V 9.4A TO257, Current - Reverse Leakage @ Vr: 5 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: -55°C ~ 250°C, Supplier Device Package: TO-257, Current - Average Rectified (Io): 9.4A, Capacitance @ Vr, F: 1107pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-257-3, Packaging: Tube.