1N8170/TR Microchip Technology
Виробник: Microchip Technology
Description: TVS DIODE 53VWM 85.3VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.76A
Voltage - Reverse Standoff (Typ): 53V
Supplier Device Package: Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 58.9V
Voltage - Clamping (Max) @ Ipp: 85.3V
Power - Peak Pulse: 150W
Power Line Protection: No
Description: TVS DIODE 53VWM 85.3VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.76A
Voltage - Reverse Standoff (Typ): 53V
Supplier Device Package: Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 58.9V
Voltage - Clamping (Max) @ Ipp: 85.3V
Power - Peak Pulse: 150W
Power Line Protection: No
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Технічний опис 1N8170/TR Microchip Technology
Description: TVS DIODE 53VWM 85.3VC AXIAL, Packaging: Tape & Reel (TR), Package / Case: Axial, Mounting Type: Through Hole, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 1.76A, Voltage - Reverse Standoff (Typ): 53V, Supplier Device Package: Axial, Bidirectional Channels: 1, Voltage - Breakdown (Min): 58.9V, Voltage - Clamping (Max) @ Ipp: 85.3V, Power - Peak Pulse: 150W, Power Line Protection: No.
Інші пропозиції 1N8170/TR
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Доступність |
Ціна |
|---|---|---|---|---|---|
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1N8170/TR | Виробник : Microsemi |
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