1PS59SB20,115 NXP USA Inc.
Виробник: NXP USA Inc.Description: DIODE SCHOT 40V 500MA SMT3 MPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SMT3; MPAK
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
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Технічний опис 1PS59SB20,115 NXP USA Inc.
Description: DIODE SCHOT 40V 500MA SMT3 MPAK, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 90pF @ 0V, 1MHz, Current - Average Rectified (Io): 500mA, Supplier Device Package: SMT3; MPAK, Operating Temperature - Junction: 125°C (Max), Voltage - DC Reverse (Vr) (Max): 40 V, Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA, Current - Reverse Leakage @ Vr: 100 µA @ 35 V.