1SS361FV,L3XGF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: 80V/0.1 A SWITCHING DIODE, SOT-7
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: VESM
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
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Технічний опис 1SS361FV,L3XGF Toshiba Semiconductor and Storage
Description: 80V/0.1 A SWITCHING DIODE, SOT-7, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 500 nA @ 80 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA, Voltage - DC Reverse (Vr) (Max): 80 V, Grade: Automotive, Operating Temperature - Junction: 150°C, Supplier Device Package: VESM, Current - Average Rectified (Io) (per Diode): 100mA, Diode Configuration: 1 Pair Common Cathode, Technology: Standard, Reverse Recovery Time (trr): 4 ns, Speed: Small Signal =< 200mA (Io), Any Speed, Mounting Type: Surface Mount, Package / Case: SOT-723, Packaging: Tape & Reel (TR).