1SS54-TB Renesas Electronics America Inc

Description: DIODE GEN PURP 50V 100MA DO35, Current - Reverse Leakage @ Vr: 100 nA @ 50 V, Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 mA, Voltage - DC Reverse (Vr) (Max): 50 V, Part Status: Active, Operating Temperature - Junction: 200°C (Max), Supplier Device Package: DO-35, Current - Average Rectified (Io): 100mA, Capacitance @ Vr, F: 5pF @ 0V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 20 ns, Mounting Type: Through Hole, Package / Case: DO-204AH, DO-35, Axial, Packaging: Bulk.