20ETS08 Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 20A TO220AC
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Obsolete
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 20A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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Технічний опис 20ETS08 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 20A TO220AC, Current - Reverse Leakage @ Vr: 100 µA @ 800 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A, Voltage - DC Reverse (Vr) (Max): 800 V, Part Status: Obsolete, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: TO-220AC, Current - Average Rectified (Io): 20A, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube.
Інші пропозиції 20ETS08
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
20ETS08 | Виробник : Vishay Semiconductors |
Rectifiers RECOMMENDED ALT 20ETS08-M3 |
товару немає в наявності |