Технічний опис 2N6032 MOTOROLA
Description: POWER BJT, Packaging: Bulk, Package / Case: TO-204AA, TO-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C, Vce Saturation (Max) @ Ib, Ic: 1.3V @ 5A, 50A, Current - Collector Cutoff (Max): 10mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50A, 2.6V, Supplier Device Package: TO-204AD (TO-3), Part Status: Active, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 90 V, Power - Max: 140 W.
Інші пропозиції 2N6032
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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| 2N6032 | Виробник : Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C Vce Saturation (Max) @ Ib, Ic: 1.3V @ 5A, 50A Current - Collector Cutoff (Max): 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50A, 2.6V Supplier Device Package: TO-204AD (TO-3) Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 90 V Power - Max: 140 W |
товар відсутній |
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| 2N6032 | Виробник : Microchip Technology | Bipolar Transistors - BJT 90V NPN Power BJT THT |
товар відсутній |