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2N3417_D89Z

2N3417_D89Z onsemi

2N3416,2N3417.pdf
Виробник: onsemi
Description: TRANS NPN 50V 0.5A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 4.5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 2000 шт
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Технічний опис 2N3417_D89Z onsemi

Description: TRANS NPN 50V 0.5A TO92-3, Power - Max: 625 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 500 mA, Supplier Device Package: TO-92-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 4.5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 50mA, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Packaging: Tape & Reel (TR).