2N3852 Microchip Technology
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200µA, 1mA
Frequency - Transition: 20MHz
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 30 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200µA, 1mA
Frequency - Transition: 20MHz
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 30 W
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Технічний опис 2N3852 Microchip Technology
Description: POWER BJT, Packaging: Bulk, Package / Case: TO-210AA, TO-59-4, Stud, Mounting Type: Stud Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 200µA, 1mA, Frequency - Transition: 20MHz, Supplier Device Package: TO-59, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 30 W.
Інші пропозиції 2N3852
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| 2N3852 | Виробник : Microchip Technology | Bipolar Transistors - BJT Power BJT |
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