2N4123TAR onsemi
Виробник: onsemi
Description: TRANS NPN 30V 0.2A TO-92-3
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 200 mA
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Технічний опис 2N4123TAR onsemi
Description: TRANS NPN 30V 0.2A TO-92-3, Part Status: Obsolete, Supplier Device Package: TO-92-3, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V, Current - Collector Cutoff (Max): 50nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Packaging: Tape & Box (TB), Power - Max: 625 mW, Voltage - Collector Emitter Breakdown (Max): 30 V, Current - Collector (Ic) (Max): 200 mA.