2N4150S Microchip Technology
Виробник: Microchip TechnologyDescription: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 5V
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Power - Max: 1 W
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Технічний опис 2N4150S Microchip Technology
Description: NPN TRANSISTOR, Packaging: Bulk, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A, Current - Collector Cutoff (Max): 10µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 5V, Supplier Device Package: TO-39, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 70 V, Power - Max: 1 W.
Інші пропозиції 2N4150S
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| 2N4150S | Виробник : Microchip Technology |
Bipolar Transistors - BJT 70 V Power BJT |
товару немає в наявності |