2N6027RLRA onsemi

Виробник: onsemi
Description: PROGRAMMABLE UJT 40V TO92
Power Dissipation (Max): 300 mW
Current - Gate to Anode Leakage (Igao): 10 nA
Part Status: Obsolete
Current - Valley (Iv): 50 µA
Voltage - Offset (Vt): 1.6 V
Current - Peak: 2 µA
Voltage: 40V
Voltage - Output: 11V
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Cut Tape (CT)

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Технічний опис 2N6027RLRA onsemi

Description: PROGRAMMABLE UJT 40V TO92, Power Dissipation (Max): 300 mW, Current - Gate to Anode Leakage (Igao): 10 nA, Part Status: Obsolete, Current - Valley (Iv): 50 µA, Voltage - Offset (Vt): 1.6 V, Current - Peak: 2 µA, Voltage: 40V, Voltage - Output: 11V, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Packaging: Cut Tape (CT).