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2N7002PM,315

2N7002PM,315 NXP USA Inc.

DiscreteSemiconductors.pdf
Виробник: NXP USA Inc.
Description: MOSFET N-CH 60V 300MA DFN1006-3
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: DFN1006-3
Power Dissipation (Max): 250mW (Ta)
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
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Технічний опис 2N7002PM,315 NXP USA Inc.

Description: MOSFET N-CH 60V 300MA DFN1006-3, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Part Status: Obsolete, Supplier Device Package: DFN1006-3, Power Dissipation (Max): 250mW (Ta), Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-XFDFN, Packaging: Tape & Reel (TR).