2N7635-GA GeneSiC Semiconductor
Виробник: GeneSiC Semiconductor
Description: TRANS SJT 650V 4A TO257
Input Capacitance (Ciss) (Max) @ Vds: 324 pF @ 35 V
Drain to Source Voltage (Vdss): 650 V
Supplier Device Package: TO-257
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 415mOhm @ 4A
Current - Continuous Drain (Id) @ 25°C: 4A (Tc) (165°C)
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: -55°C ~ 225°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-257-3
Packaging: Bulk
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Технічний опис 2N7635-GA GeneSiC Semiconductor
Description: TRANS SJT 650V 4A TO257, Input Capacitance (Ciss) (Max) @ Vds: 324 pF @ 35 V, Drain to Source Voltage (Vdss): 650 V, Supplier Device Package: TO-257, Power Dissipation (Max): 47W (Tc), Rds On (Max) @ Id, Vgs: 415mOhm @ 4A, Current - Continuous Drain (Id) @ 25°C: 4A (Tc) (165°C), Technology: SiC (Silicon Carbide Junction Transistor), Operating Temperature: -55°C ~ 225°C (TJ), Mounting Type: Through Hole, Package / Case: TO-257-3, Packaging: Bulk.