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2N7638-GA

2N7638-GA GeneSiC Semiconductor

2N7638-GA.pdf
Виробник: GeneSiC Semiconductor
Description: TRANS SJT 650V 8A TO276
Supplier Device Package: TO-276
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 8A
Current - Continuous Drain (Id) @ 25°C: 8A (Tc) (158°C)
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: -55°C ~ 225°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-276AA
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 35 V
Drain to Source Voltage (Vdss): 650 V
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Технічний опис 2N7638-GA GeneSiC Semiconductor

Description: TRANS SJT 650V 8A TO276, Supplier Device Package: TO-276, Power Dissipation (Max): 200W (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 8A, Current - Continuous Drain (Id) @ 25°C: 8A (Tc) (158°C), Technology: SiC (Silicon Carbide Junction Transistor), Operating Temperature: -55°C ~ 225°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-276AA, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 35 V, Drain to Source Voltage (Vdss): 650 V.