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2PD601AQ,115

2PD601AQ,115 NXP USA Inc.

2PD601A_SER_6.pdf
Виробник: NXP USA Inc.
Description: TRANS NPN 50V 0.1A SMT3 MPAK
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SMT3; MPAK
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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Технічний опис 2PD601AQ,115 NXP USA Inc.

Description: TRANS NPN 50V 0.1A SMT3 MPAK, Power - Max: 250 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: SMT3; MPAK, Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V, Current - Collector Cutoff (Max): 10nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).