2SA1038STPR Rohm Semiconductor

Description: TRANS GP BJT PNP 120V 0.05A 3-PI, Power - Max: 300 mW, Voltage - Collector Emitter Breakdown (Max): 120 V, Current - Collector (Ic) (Max): 50 mA, Part Status: Active, Supplier Device Package: SPT, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V, Current - Collector Cutoff (Max): 500nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: SC-72 Formed Leads, Packaging: Tape & Box (TB).