2SA1425-Y,T2F(J Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and StorageDescription: TRANS PNP 120V 0.8A MSTM
Packaging: Bulk
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: MSTM
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1 W
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Технічний опис 2SA1425-Y,T2F(J Toshiba Semiconductor and Storage
Description: TRANS PNP 120V 0.8A MSTM, Packaging: Bulk, Package / Case: SC-71, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V, Frequency - Transition: 120MHz, Supplier Device Package: MSTM, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 120 V, Power - Max: 1 W.