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2SA854STPR

2SA854STPR Rohm Semiconductor

2SA854S.pdf
Виробник: Rohm Semiconductor
Description: TRANS PNP 32V 0.5A SPT
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SPT
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: SC-72 Formed Leads
Packaging: Tape & Box (TB)
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Технічний опис 2SA854STPR Rohm Semiconductor

Description: TRANS PNP 32V 0.5A SPT, Power - Max: 300 mW, Voltage - Collector Emitter Breakdown (Max): 32 V, Current - Collector (Ic) (Max): 500 mA, Supplier Device Package: SPT, Frequency - Transition: 200MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V, Current - Collector Cutoff (Max): 1µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: SC-72 Formed Leads, Packaging: Tape & Box (TB).