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2SB1239TV2

2SB1239TV2 Rohm Semiconductor

2SB1183%2C1239.pdf
Виробник: Rohm Semiconductor
Description: TRANS PNP DARL 40V 2A ATV
Supplier Device Package: ATV
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 500mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.2mA, 600mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: 3-SIP
Packaging: Tape & Box (TB)
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 2 A
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Технічний опис 2SB1239TV2 Rohm Semiconductor

Description: TRANS PNP DARL 40V 2A ATV, Supplier Device Package: ATV, DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 500mA, 2V, Current - Collector Cutoff (Max): 1µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.2mA, 600mA, Operating Temperature: 150°C (TJ), Transistor Type: PNP - Darlington, Mounting Type: Through Hole, Package / Case: 3-SIP, Packaging: Tape & Box (TB), Power - Max: 1 W, Voltage - Collector Emitter Breakdown (Max): 40 V, Current - Collector (Ic) (Max): 2 A.