Продукція > ROHM SEMICONDUCTOR > 2SB1308T100P
2SB1308T100P

2SB1308T100P Rohm Semiconductor

2sb1308.pdf
Виробник: Rohm Semiconductor
Description: TRANS PNP 20V 3A MPT3
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 3 A
Part Status: Obsolete
Supplier Device Package: MPT3
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 500mA, 2V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 150mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис 2SB1308T100P Rohm Semiconductor

Description: TRANS PNP 20V 3A MPT3, Power - Max: 2 W, Voltage - Collector Emitter Breakdown (Max): 20 V, Current - Collector (Ic) (Max): 3 A, Part Status: Obsolete, Supplier Device Package: MPT3, Frequency - Transition: 120MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 500mA, 2V, Current - Collector Cutoff (Max): 500nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 450mV @ 150mA, 1.5A, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-243AA, Packaging: Tape & Reel (TR).