2SB1375,CLARIONF(M Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and StorageDescription: TRANS PNP 60V 3A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 200mA, 2A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 9MHz
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
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Технічний опис 2SB1375,CLARIONF(M Toshiba Semiconductor and Storage
Description: TRANS PNP 60V 3A TO-220NIS, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 200mA, 2A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V, Frequency - Transition: 9MHz, Supplier Device Package: TO-220NIS, Part Status: Obsolete, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 2 W.