Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > 2SB1375,CLARIONF(M
2SB1375,CLARIONF(M

2SB1375,CLARIONF(M Toshiba Semiconductor and Storage

2SB1375_2006-11-21.pdf
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 60V 3A TO-220NIS
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 3 A
Part Status: Obsolete
Supplier Device Package: TO-220NIS
Frequency - Transition: 9MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис 2SB1375,CLARIONF(M Toshiba Semiconductor and Storage

Description: TRANS PNP 60V 3A TO-220NIS, Power - Max: 2 W, Voltage - Collector Emitter Breakdown (Max): 60 V, Current - Collector (Ic) (Max): 3 A, Part Status: Obsolete, Supplier Device Package: TO-220NIS, Frequency - Transition: 9MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V, Current - Collector Cutoff (Max): 10µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 200mA, 2A, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Bulk.