2SB1457,T6TOTOF(J Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and StorageDescription: TRANS PNP 100V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92MOD
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 900 mW
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Технічний опис 2SB1457,T6TOTOF(J Toshiba Semiconductor and Storage
Description: TRANS PNP 100V 2A TO92MOD, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 Long Body, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V, Frequency - Transition: 50MHz, Supplier Device Package: TO-92MOD, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 900 mW.