Технічний опис 2SB1707 TL ROHM
Description: TRANS PNP 12V 4A TSMT3, Power - Max: 500 mW, Voltage - Collector Emitter Breakdown (Max): 12 V, Current - Collector (Ic) (Max): 4 A, Supplier Device Package: TSMT3, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 250mV @ 40mA, 2A, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: SC-96, Packaging: Tape & Reel (TR).
Інші пропозиції 2SB1707 TL
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| 2SB1707TL | Виробник : ROHM |
 09+ |
на замовлення 540018 шт: термін постачання 14-28 дні (днів) |
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2SB1707TL | Виробник : Rohm Semiconductor |
Description: TRANS PNP 12V 4A TSMT3 Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 12 V Current - Collector (Ic) (Max): 4 A Supplier Device Package: TSMT3 Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 40mA, 2A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: SC-96 Packaging: Tape & Reel (TR) |
товару немає в наявності |
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2SB1707TL | Виробник : Rohm Semiconductor |
Description: TRANS PNP 12V 4A TSMT3 Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 12 V Current - Collector (Ic) (Max): 4 A Supplier Device Package: TSMT3 Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 40mA, 2A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: SC-96 Packaging: Cut Tape (CT) |
товару немає в наявності |
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2SB1707TL | Виробник : ROHM Semiconductor |
Bipolar Transistors - BJT PNP 12V 4A |
товару немає в наявності |