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2SB566KC-E

2SB566KC-E Renesas Electronics Corporation

HITJD00001-22.pdf?t.download=true&u=5oefqw
Виробник: Renesas Electronics Corporation
Description: POWER BIPOLAR TRANSISTOR, PNP
Part Status: Active
Packaging: Bulk
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-220AB
Frequency - Transition: 15MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 4V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3
на замовлення 2612 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
195+107.86 грн
Мінімальне замовлення: 195 шт
В кошику  од. на суму  грн.
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Технічний опис 2SB566KC-E Renesas Electronics Corporation

Description: POWER BIPOLAR TRANSISTOR, PNP, Part Status: Active, Packaging: Bulk, Power - Max: 40 W, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 4 A, Supplier Device Package: TO-220AB, Frequency - Transition: 15MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 4V, Current - Collector Cutoff (Max): 1µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-220-3.