2SB566KC-E Renesas Electronics Corporation
Виробник: Renesas Electronics CorporationDescription: POWER BIPOLAR TRANSISTOR, PNP
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 4V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220AB
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 40 W
на замовлення 2612 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 195+ | 107.78 грн |
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Технічний опис 2SB566KC-E Renesas Electronics Corporation
Description: POWER BIPOLAR TRANSISTOR, PNP, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 4V, Frequency - Transition: 15MHz, Supplier Device Package: TO-220AB, Part Status: Active, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 40 W.