2SC2859-O(TE85L,F) Toshiba Semiconductor and Storage

Description: TRANS NPN 30V 0.5A S-MINI, Power - Max: 150 mW, Voltage - Collector Emitter Breakdown (Max): 30 V, Current - Collector (Ic) (Max): 500 mA, Part Status: Obsolete, Supplier Device Package: S-Mini, Frequency - Transition: 300MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Operating Temperature: 125°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).