Технічний опис 2SC2859-Y(TE85L,F) Toshiba
Description: TRANS NPN 30V 0.5A S-MINI, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 125°C (TJ), Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V, Frequency - Transition: 300MHz, Supplier Device Package: S-Mini, Part Status: Obsolete, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 150 mW.
Інші пропозиції 2SC2859-Y(TE85L,F)
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
2SC2859-Y(TE85L,F) | Виробник : Toshiba Semiconductor and Storage |
Description: TRANS NPN 30V 0.5A S-MINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Frequency - Transition: 300MHz Supplier Device Package: S-Mini Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 150 mW |
товару немає в наявності |
|
|
|
2SC2859-Y(TE85L,F) | Виробник : Toshiba Semiconductor and Storage |
Description: TRANS NPN 30V 0.5A S-MINI Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Frequency - Transition: 300MHz Supplier Device Package: S-Mini Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 150 mW |
товару немає в наявності |