2SC3669-Y,T2PASF(M Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 80V 2A MSTM
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: MSTM
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: SC-71
Packaging: Bulk
Відгуки про товар
Написати відгук
Технічний опис 2SC3669-Y,T2PASF(M Toshiba Semiconductor and Storage
Description: TRANS NPN 80V 2A MSTM, Power - Max: 1 W, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 2 A, Part Status: Obsolete, Supplier Device Package: MSTM, Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V, Current - Collector Cutoff (Max): 1µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: SC-71, Packaging: Bulk.
Інші пропозиції 2SC3669-Y,T2PASF(M
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| 2SC3669-Y,T2PASF(M | Виробник : Toshiba |
Toshiba |
товару немає в наявності |