2SC3922 Sanyo

Description: NPN EPITAXIAL PLANAR SILICON, Resistor - Base (R1): 2.2 kOhms, Frequency - Transition: 250 MHz, Power - Max: 600 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 500 mA, Supplier Device Package: 3-NP, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Resistor - Emitter Base (R2): 10 kOhms, Part Status: Active, Packaging: Bulk.