Технічний опис 2SC5201(TE6,F,M) Toshiba
Description: TRANS NPN 600V 0.05A TO92MOD, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 Long Body, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 20mA, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V, Supplier Device Package: TO-92MOD, Part Status: Obsolete, Current - Collector (Ic) (Max): 50 mA, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 900 mW.
Інші пропозиції 2SC5201(TE6,F,M)
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| 2SC5201(TE6,F,M) | Виробник : Toshiba Semiconductor and Storage |
 Description: TRANS NPN 600V 0.05A TO92MODPackaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 20mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 900 mW |
товару немає в наявності |