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2SC5459(TOJS,Q,M)

2SC5459(TOJS,Q,M) Toshiba Semiconductor and Storage

2SC5459_2007-04-26.pdf Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 400V 3A TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 150mA, 1.2A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 300mA, 5V
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2 W
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Технічний опис 2SC5459(TOJS,Q,M) Toshiba Semiconductor and Storage

Description: TRANS NPN 400V 3A TO220NIS, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 150mA, 1.2A, Current - Collector Cutoff (Max): 100µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 300mA, 5V, Supplier Device Package: TO-220NIS, Part Status: Obsolete, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 400 V, Power - Max: 2 W.