2SC5773JR-TL-E Renesas Electronics Corporation
Виробник: Renesas Electronics CorporationDescription: SMALL SIGNAL BIPOLAR TRANSTR NPN
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11.9dB
Power - Max: 700mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 50mA, 5V
Frequency - Transition: 10.8GHz
Noise Figure (dB Typ @ f): 1.1dB @ 900MHz
Supplier Device Package: 3-MPAK
на замовлення 1400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 955+ | 21.14 грн |
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Технічний опис 2SC5773JR-TL-E Renesas Electronics Corporation
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 11.9dB, Power - Max: 700mW, Current - Collector (Ic) (Max): 80mA, Voltage - Collector Emitter Breakdown (Max): 6V, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 50mA, 5V, Frequency - Transition: 10.8GHz, Noise Figure (dB Typ @ f): 1.1dB @ 900MHz, Supplier Device Package: 3-MPAK.