Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > 2SC5819(TE12L,ZF)
2SC5819(TE12L,ZF)

2SC5819(TE12L,ZF) Toshiba Semiconductor and Storage

2SC5819_datasheet_en_20061110.pdf?did=20758&prodName=2SC5819
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 20V 1.5A PW-MINI
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 1.5 A
Supplier Device Package: PW-MINI
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 10mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Box
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Технічний опис 2SC5819(TE12L,ZF) Toshiba Semiconductor and Storage

Description: TRANS NPN 20V 1.5A PW-MINI, Power - Max: 1 W, Voltage - Collector Emitter Breakdown (Max): 20 V, Current - Collector (Ic) (Max): 1.5 A, Supplier Device Package: PW-MINI, DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 150mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 120mV @ 10mA, 500mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-243AA, Packaging: Box.