2SD1312(0)-T-AZ Renesas Electronics Corporation
Виробник: Renesas Electronics Corporation
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 200mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Power - Max: 1 W
Packaging: Bulk
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: 3-SSIP
| Кількість | Ціна |
|---|---|
| 650+ | 34.64 грн |
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Технічний опис 2SD1312(0)-T-AZ Renesas Electronics Corporation
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN, Frequency - Transition: 120MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 200mA, 1V, Current - Collector Cutoff (Max): 100nA (ICBO), Power - Max: 1 W, Packaging: Bulk, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 1 A, Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: 3-SSIP.