2SD1697-AZ Renesas Electronics America Inc
Виробник: Renesas Electronics America IncDescription: SMALL SIGNAL BIPOLAR TRANSISTOR,
Packaging: Bulk
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 1mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 300mA, 2V
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Resistor - Base (R1): 1 kOhms
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Технічний опис 2SD1697-AZ Renesas Electronics America Inc
Description: SMALL SIGNAL BIPOLAR TRANSISTOR,, Packaging: Bulk, Package / Case: 3-SSIP, Mounting Type: Through Hole, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 1.2V @ 1mA, 500mA, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 300mA, 2V, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 1 W, Resistor - Base (R1): 1 kOhms.