2SD1697-AZ Renesas Electronics America Inc
Виробник: Renesas Electronics America Inc
Description: SMALL SIGNAL BIPOLAR TRANSISTOR,
Resistor - Base (R1): 1 kOhms
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 800 mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 300mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 1mA, 500mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Through Hole
Package / Case: 3-SSIP
Packaging: Bulk
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Технічний опис 2SD1697-AZ Renesas Electronics America Inc
Description: SMALL SIGNAL BIPOLAR TRANSISTOR,, Resistor - Base (R1): 1 kOhms, Power - Max: 1 W, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 800 mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 300mA, 2V, Current - Collector Cutoff (Max): 1µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1.2V @ 1mA, 500mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Through Hole, Package / Case: 3-SSIP, Packaging: Bulk.