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2SD1768STPQ

2SD1768STPQ Rohm Semiconductor

2SD1898,1733,1768S,1863.pdf Виробник: Rohm Semiconductor
Description: TRANS NPN 80V 1A SPT
Packaging: Tape & Box (TB)
Package / Case: SC-72 Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Frequency - Transition: 100MHz
Supplier Device Package: SPT
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 300 mW
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Технічний опис 2SD1768STPQ Rohm Semiconductor

Description: TRANS NPN 80V 1A SPT, Packaging: Tape & Box (TB), Package / Case: SC-72 Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V, Frequency - Transition: 100MHz, Supplier Device Package: SPT, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 300 mW.