2SD1818-AZ Renesas Electronics America Inc
Виробник: Renesas Electronics America IncDescription: NPN SILICON POWER TRANSISTOR
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 600mA, 2V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.3 W
на замовлення 599 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 599+ | 39.76 грн |
Відгуки про товар
Написати відгук
Технічний опис 2SD1818-AZ Renesas Electronics America Inc
Description: NPN SILICON POWER TRANSISTOR, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 250mV @ 150mA, 1.5A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 600mA, 2V, Supplier Device Package: TO-126, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 1.3 W.