Технічний опис 2SD2227S-TP-W ROHM
Description: TRANS NPN 50V 0.15A SPT, Power - Max: 300 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 150 mA, Supplier Device Package: SPT, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 1200 @ 1mA, 5V, Current - Collector Cutoff (Max): 300nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: SC-72 Formed Leads, Packaging: Tape & Box (TB).
Інші пропозиції 2SD2227S-TP-W
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
2SD2227STPW | Виробник : Rohm Semiconductor |
Description: TRANS NPN 50V 0.15A SPTPower - Max: 300 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 150 mA Supplier Device Package: SPT Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 1200 @ 1mA, 5V Current - Collector Cutoff (Max): 300nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: SC-72 Formed Leads Packaging: Tape & Box (TB) |
товару немає в наявності |

