2SD2281R onsemi
Виробник: onsemiDescription: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 300mA, 6A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency - Transition: 10MHz
Supplier Device Package: TO-3PML
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3 W
на замовлення 5455 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 296+ | 73.93 грн |
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Технічний опис 2SD2281R onsemi
Description: POWER BIPOLAR TRANSISTOR NPN, Packaging: Bulk, Package / Case: TO-3P-3 Full Pack, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 300mA, 6A, Current - Collector Cutoff (Max): 100µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V, Frequency - Transition: 10MHz, Supplier Device Package: TO-3PML, Current - Collector (Ic) (Max): 12 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 3 W.