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2SD2406-Y(F)

2SD2406-Y(F) Toshiba Semiconductor and Storage

2SD2406.pdf
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 80V 4A TO-220NIS
Power - Max: 25 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-220NIS
Frequency - Transition: 8MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 5V
Current - Collector Cutoff (Max): 30µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 300mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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Технічний опис 2SD2406-Y(F) Toshiba Semiconductor and Storage

Description: TRANS NPN 80V 4A TO-220NIS, Power - Max: 25 W, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 4 A, Supplier Device Package: TO-220NIS, Frequency - Transition: 8MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 5V, Current - Collector Cutoff (Max): 30µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 300mA, 3A, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.