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2SD2406-Y(F)

2SD2406-Y(F) Toshiba Semiconductor and Storage

2SD2406.pdf Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 80V 4A TO220NIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 300mA, 3A
Current - Collector Cutoff (Max): 30µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 5V
Frequency - Transition: 8MHz
Supplier Device Package: TO-220NIS
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 25 W
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Технічний опис 2SD2406-Y(F) Toshiba Semiconductor and Storage

Description: TRANS NPN 80V 4A TO220NIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 300mA, 3A, Current - Collector Cutoff (Max): 30µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 5V, Frequency - Transition: 8MHz, Supplier Device Package: TO-220NIS, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 25 W.