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2SD2607FU6

2SD2607FU6 Rohm Semiconductor

2SD2607.pdf Виробник: Rohm Semiconductor
Description: TRANS NPN DARL 100V 8A TO220FN
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 6mA, 3A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Frequency - Transition: 40MHz
Supplier Device Package: TO-220FN
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
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Технічний опис 2SD2607FU6 Rohm Semiconductor

Description: TRANS NPN DARL 100V 8A TO220FN, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Transistor Type: NPN - Darlington, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 6mA, 3A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V, Frequency - Transition: 40MHz, Supplier Device Package: TO-220FN, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 2 W.