2SD768K01-E#00 Renesas Electronics Corporation
Виробник: Renesas Electronics Corporation
Description: NPN BIPOLAR TRANSISTOR
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 6 A
Supplier Device Package: TO-220AB
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 60mA, 6A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3
Part Status: Active
Packaging: Bulk
Відгуки про товар
Написати відгук
Технічний опис 2SD768K01-E#00 Renesas Electronics Corporation
Description: NPN BIPOLAR TRANSISTOR, Power - Max: 40 W, Voltage - Collector Emitter Breakdown (Max): 120 V, Current - Collector (Ic) (Max): 6 A, Supplier Device Package: TO-220AB, DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V, Current - Collector Cutoff (Max): 10µA, Vce Saturation (Max) @ Ib, Ic: 3V @ 60mA, 6A, Operating Temperature: 150°C (TJ), Transistor Type: NPN - Darlington, Mounting Type: Through Hole, Package / Case: TO-220-3, Part Status: Active, Packaging: Bulk.