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2SD768K01-E#00

2SD768K01-E#00 Renesas Electronics Corporation

RNCCS08270-1.pdf?t.download=true&u=5oefqw Виробник: Renesas Electronics Corporation
Description: NPN BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 60mA, 6A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 40 W
на замовлення 2679 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
163+129.31 грн
Мінімальне замовлення: 163
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Технічний опис 2SD768K01-E#00 Renesas Electronics Corporation

Description: NPN BIPOLAR TRANSISTOR, Packaging: Bulk, Part Status: Active, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: NPN - Darlington, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 3V @ 60mA, 6A, Current - Collector Cutoff (Max): 10µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V, Supplier Device Package: TO-220AB, Current - Collector (Ic) (Max): 6 A, Voltage - Collector Emitter Breakdown (Max): 120 V, Power - Max: 40 W.