2SJ610(TE16L1,NQ) Toshiba Semiconductor and Storage

Description: MOSFET P-CH 250V 2A PW-MOLD, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 2.55Ohm @ 1A, 10V, Power Dissipation (Max): 20W (Ta), Vgs(th) (Max) @ Id: 3.5V @ 1mA, Supplier Device Package: PW-MOLD, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 381 pF @ 10 V.