2SK1528STR-E Renesas Electronics Corporation
Виробник: Renesas Electronics Corporation
Description: NCH POWER MOSFET 900V 4A 4000MOH
Packaging: Tape & Reel (TR)
Package / Case: SC-83
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 4Ohm @ 2A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: LDPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 10 V
Description: NCH POWER MOSFET 900V 4A 4000MOH
Packaging: Tape & Reel (TR)
Package / Case: SC-83
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 4Ohm @ 2A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: LDPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 10 V
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Технічний опис 2SK1528STR-E Renesas Electronics Corporation
Description: NCH POWER MOSFET 900V 4A 4000MOH, Packaging: Tape & Reel (TR), Package / Case: SC-83, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A, Rds On (Max) @ Id, Vgs: 4Ohm @ 2A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: LDPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 10 V.