2SK3634-Z-E1-AZ Renesas Electronics America Inc

Description: MOSFET N-CH 200V 6A TO252, Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Supplier Device Package: TO-252 (MP-3Z), Vgs(th) (Max) @ Id: 4.5V @ 1mA, Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Bulk.