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2SK3666-4-TB-E

2SK3666-4-TB-E onsemi


2SK3666.pdf Виробник: onsemi
Description: JFET N-CH 30V 10MA SMCP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: SMCP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Power - Max: 200 mW
Resistance - RDS(On): 200 Ohms
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 2.5 mA @ 10 V
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Технічний опис 2SK3666-4-TB-E onsemi

Description: JFET N-CH 30V 10MA SMCP, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), FET Type: N-Channel, Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V, Voltage - Breakdown (V(BR)GSS): 30 V, Current Drain (Id) - Max: 10 mA, Supplier Device Package: SMCP, Part Status: Obsolete, Drain to Source Voltage (Vdss): 30 V, Power - Max: 200 mW, Resistance - RDS(On): 200 Ohms, Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA, Current - Drain (Idss) @ Vds (Vgs=0): 2.5 mA @ 10 V.